Reversible paramagnetism to ferromagnetism in transition metal-doped TiO2 nanocrystals prepared by microwave irradiation

Synthesis and characterization of transition metal doped ZnSe/ZnS nanocrystals by a rapid photochemical method

In the present work, a one pot, rapid and room temperature photochemical Synthesis of transition metal (TM; Cu, Mn, Cr)-doped ZnSe/ZnS core/shell nanocrystals (NCs) was reported. FT-IR spectrum confirmed the capping of ZnSe by thioglycolic acid. XRD and TEM analysis demonstrated zinc blende phase NCs with an average size of around 3 and 5 nm for TM:ZnSe and TM:ZnSe/ZnS NCs, respectively. PL spe...

Transition‐Metal‐Doped NIR‐Emitting Silicon Nanocrystals

Impurity-doping in nanocrystals significantly affects their electronic properties and diversifies their applications. Herein, we report the synthesis of transition metal (Mn, Ni, Co, Cu)-doped oleophilic silicon nanocrystals (SiNCs) through hydrolysis/polymerization of triethoxysilane with acidic aqueous metal salt solutions, followed by thermal disproportionation of the resulting gel into a do...

A search for ferromagnetism in transition-metal-doped piezoelectric ZnO

We present the results of a computational study of ZnO in the presence of Co and Mn substitutional impurities. The goal of our work is to identify potential ferromagnetic ground states within the (Zn,Co)O or (Zn,Mn)O material systems that are also good candidates for piezoelectricity. We find that, in contrast to previous results, robust ferromagnetism is not obtained by substitution of Co or M...

Non-DMS related ferromagnetism in transition metal doped zinc oxide

We review pitfalls in recent efforts to make a conventional semiconductor, namely ZnO, ferromagnetic by means of doping with transition metal ions. Since the solubility of those elements is rather low, formation of secondary phases and the creation of defects upon low temperature processing can lead to unwanted magnetic effects. Among others, ion implantation is a method of doping, which is hig...

Transition Metal-Doped Oxide Semiconductor Exhibiting Room-Temperature Ferromagnetism